| PART |
Description |
Maker |
| SI4392DY-T1-E3 SI4392DY SI4392DY-E3 SI4392DY-T1 |
N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss N沟道，低Qg，快速开WFET，超低开关损
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| SI7404DN |
N-Channel 30-V (D-S) Fast-Switching MOSFET N通道30V（D-S）快速开关MOSFET
N-Channel 30-V (D-S) Fast Switching MOSFET
From old datasheet system
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SI9801DY |
N/P-Channel 20-V (D-S) Pair
N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge
N-/P-Channel/ Reduced Qg/ Fast Switching Half-Bridge
|
VISAY[Vishay Siliconix]
|
| GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| STGW30NC60WD |
N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH?/a> IGBT
N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| SI7806BDN-T1-E3 SI7806BDN |
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7404DN SI7404DN-T1 SI7404DN-T1-E3 |
N-Channel 30 V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7806BDN-T1-E3 |
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Intertechnology,Inc.
|
| SI7460DP SI7460DP-T1 |
N-Channel 60-V (D-S) Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI4888DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
